MT2301概述
The MT2301  P-Channel Power MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has b een especially tailored to minimize the on-state r esistance and yet maintain low gate charge for superior switching performance.
These devices a re well suit ed for portable electronics applications: load s witching and power management, battery charging circuits and DC/DC conversion.

MT2301技术特性
• 【MT2301】–3.3 A, –20 V. RDS(ON) = 0.072 Ω @ VGS = –4.5 V
  RDS(ON) = 0.096Ω @ VGS = –2.5 V
• 【MT2301】–Low gate charge (3.6 nC typical)
• 【MT2301】–High performance trench technology for extremely low RDS(ON)
• 【MT2301】–SuperSOTTM -23 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint